FQPF70N10 is a 100V N-channel MOSFET manufactured by Fairchild Semiconductor. This device has low on-state resistance, low gate charge, fast switching, 100% avalanche tested, improved dv/dt capability, and is well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
The FQPF70N10 is an N‑Channel enhancement mode power MOSFET fabricated with Fairchild's planar stripe DMOS technology. It is designed for low‑voltage applications such as audio amplifiers, high‑efficiency DC/DC converters, and DC motor control, offering low on‑state resistance and fast switching.
Key specifications include a 100 V drain‑source breakdown voltage, 35 A continuous drain current at 25 °C, typical on‑resistance of 0.0232 Ω at VGS = 10 V, and a maximum junction temperature of 175 °C. The device is supplied in a TO‑220F package and is rated for 62 W power dissipation at 25 °C.
| Drain‑Source Voltage (V_DSS) | 100 V |
|---|---|
| Continuous Drain Current (I_D) at 25 °C | 35 A |
| On‑Resistance (R_DS(on)) | 0.0232 Ω (typical at V_GS=10 V) |
| Typical Gate Charge (Q_g) | 85 nC |
| Maximum Power Dissipation (P_D) at 25 °C | 62 W |
| Maximum Junction Temperature | 175 °C |
| Thermal Resistance, Junction‑to‑Case (RθJC) | 2.42 °C·W |
| Package Type | TO‑220F |
The device can handle a continuous drain current of 35 A at a case temperature of 25 °C.
The typical gate charge is 85 nC.
It is supplied in a TO‑220F package.
The MOSFET is rated for a maximum junction temperature of 175 °C.