FQPF70N10 is a N-Channel enhancement mode power field effect transistor produced by Fairchild Semiconductor using its proprietary planar stripe DMOS technology. It has low on-state resistance, superior switching performance and high energy pulse withstand capability. It is suitable for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
The FQPF70N10 is a 100 V N‑Channel enhancement‑mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is designed for low‑voltage applications such as audio amplifiers, high‑efficiency DC‑DC converters and DC motor control, offering low on‑state resistance and fast switching.
Key specifications include a continuous drain current of 35 A (247 A at 100 °C), a typical on‑resistance of 0.0232 Ω at VGS = 10 V, and a total gate charge of about 110 nC. The device is rated for a maximum junction temperature of 175 °C and includes thermal resistance values for junction‑to‑case and junction‑to‑ambient.
| Drain‑Source Voltage (VDS) | 100 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 35 A |
| Continuous Drain Current (ID) @ 100 °C | 247 A |
| Pulsed Drain Current (ID) (Note 1) | 140 A |
| On‑Resistance (RDS(on)) @ VGS=10 V | 0.0232 Ω |
| Typical Gate Charge (Qg) | 85 nC |
| Power Dissipation (PD) @ 25 °C | 62 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 2.42 °C·W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 62.5 °C·W |
| Maximum Junction Temperature (Tj) | 175 °C |
The device can handle a continuous drain current of 35 A at 25 °C and 247 A at 100 °C.
The typical on‑resistance is 0.0232 Ω when the gate‑source voltage is 10 V.
The typical gate charge is 85 nC, with a total gate charge of about 110 nC.
The MOSFET is rated for a maximum junction temperature of 175 °C, with a junction‑to‑case thermal resistance of 2.42 °C·W and junction‑to‑ambient of 62.5 °C·W.