Key facts
- Brand
- Fairchild
- Model
- FQPF7N60
- Industry
- Industrial
- Documents
- 3
- Languages
- EN
- Last added
- 2012-07-12
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FAIRCHILD FQPF7N60 Manual
This document introduces an N-channel enhancement mode power field effect transistor produced by Fairchild. It uses Fairchild's proprietary planar stripe DMOS technology, which minimizes on-state resistance, provides superior switching performance, and withstands high energy pulse in avalanche and commutation mode. It is suitable for high efficiency switch mode power supplies.
Read onlineFairchild FQPF7N60 specifications
| Drain-Source Voltage (VDS) | 600 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | 4.3 A |
| Pulsed Drain Current (ID) (Note 1) | 17.2 A |
| Gate-Source Voltage (VGS) | ±30 V |
| Power Dissipation (PD) at 25 °C | 48 W |
| Thermal Resistance Junction‑to‑Case (RθJC) | 2.60 °C/W |
| Thermal Resistance Junction‑to‑Ambient (RθJA) | 62.5 °C/W |
| Typical Gate Charge (Qg) | 29 nC |
All Fairchild FQPF7N60 documents by type
Day-to-day operation, settings and troubleshooting. Start here if the product is already set up.
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage rating?
The device is rated for a maximum drain‑source voltage of 600 V.
What continuous drain current can the FQPF7N60 handle at 25 °C?
It can handle a continuous drain current of 4.3 A at 25 °C.
What is the maximum drain‑source voltage rating?
The FQPF7N60 can withstand up to 600 V drain‑source voltage.
How much continuous drain current can it handle at 25 °C?
It is rated for 43 A continuous drain current at a case temperature of 25 °C.