Key facts
- Brand
- Fairchild
- Model
- FQPF7N20
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-12
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Fairchild FQPF7N20 Datasheet
The FQPF7N20 is a 200 V N‑Channel enhancement‑mode power MOSFET designed for high‑efficiency switching applications such as DC‑DC converters, switch‑mode power supplies, and motor control. It features low gate charge, low output capacitance, and fast switching performance.
Key specifications include a continuous drain current of 48 A at 25 °C, a pulsed drain current of 19.2 A, a typical on‑resistance of 0.55 mΩ, and a TO‑220F package with detailed thermal resistance values. The device is rated for a gate‑source voltage of ±30 V and includes extensive test data and characteristic curves.
Fairchild FQPF7N20 specifications
| Drain‑Source Voltage (V_DSS) | 200 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 48 A |
| Pulsed Drain Current (I_D) (Note 1) | 19.2 A |
| Gate‑Source Voltage (V_GS) | ±30 V |
| Power Dissipation (P_D) @ 25 °C | 37 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 3.38 °C·W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 62.5 °C·W |
| On‑Resistance (R_DS(on)) Typical | 0.55 mΩ |
| Output Capacitance (Coss) Typical | 60 pF |
| Package Type | TO‑220F |
Source: Fairchild FQPF7N20 Datasheet
All Fairchild FQPF7N20 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage for the FQPF7N20?
The device is rated for a maximum drain‑source voltage of 200 V.
What continuous drain current can the FQPF7N20 handle at 25 °C?
It can conduct up to 48 A continuously at a case temperature of 25 °C.
What is the maximum drain‑source voltage for the FQPF7N20?
The maximum drain‑source voltage is 200 V.
What is the typical on‑resistance of the FQPF7N20?
The typical on‑resistance is about 0.55 mΩ.