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- Brand
- Fairchild
- Model
- FQPF7N65C
- Industry
- Industrial
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- 3
- Languages
- EN
- Last added
- 2012-07-12
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Fairchild Semiconductor FQP7N65C/FQPF7N65C N-Channel MOSFET Datasheet
This document is a datasheet for the Fairchild Semiconductor FQP7N65C and FQPF7N65C N-Channel enhancement mode power field effect transistors. These devices utilize Fairchild's proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance. They are designed for applications such as high efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology.
Read onlineFairchild FQPF7N65C specifications
| Drain-Source Voltage | 650 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 7 A |
| Continuous Drain Current (Tc = 100°C) | 4.2 A |
| Pulsed Drain Current | 28 A |
| Gate-Source Voltage | +30 V |
| Single Pulsed Avalanche Energy | 212 mJ |
| Power Dissipation (Tc = 25°C) | 160 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Package Type | TO-220 / TO-220F |
Source: Fairchild Semiconductor FQP7N65C/FQPF7N65C N-Channel MOSFET Datasheet
All Fairchild FQPF7N65C documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the typical gate charge for these MOSFETs?
The typical gate charge is 28 nC.
From: Fairchild Semiconductor FQP7N65C/FQPF7N65C N-Channel MOSFET Datasheet
What is the typical Crss for these devices?
The typical Crss is 12 pF.
From: Fairchild Semiconductor FQP7N65C/FQPF7N65C N-Channel MOSFET Datasheet
What is the maximum drain‑source voltage for the FQP7N65C/FQPF7N65C?
The maximum drain‑source voltage is 650 V.
From: Fairchild FQP7N65C/FQPF7N65C 650V N-Channel MOSFET Datasheet
What continuous drain current can the device handle at 25 °C?
It can conduct up to 7 A continuously at 25 °C.
From: Fairchild FQP7N65C/FQPF7N65C 650V N-Channel MOSFET Datasheet
What is the maximum drain‑source voltage for the FQP7N65C/FQPF7N65C?
The device can withstand up to 650 V drain‑source voltage.