Fairchild FQPF7N65C Manuals

The FQP7N65C/FQPF7N65C is a N-channel enhancement mode power field effect transistor produced by Fairchild. It uses Fairchild's proprietary planar stripe DMOS technology, which has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

This document describes the features of the FQP7N65C/FQPF7N65C 650V N-Channel MOSFET. It is produced using Fairchild's proprietary planar stripe DMOS technology, which minimizes on-state resistance, provides superior switching performance, and withstands high energy pulse in avalanche and commutation mode. These devices are suitable for high efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology.

FQP7N65C/FQPF7N65C is a 650V N-channel MOSFET manufactured by Fairchild. It features low gate charge, low drain-source capacitance, fast switching, 100% avalanche tested and improved dv/dt capability. This device is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.