FQPF70N10 is a 100V N-channel MOSFET from Fairchild that uses Fairchild's proprietary planar stripe DMOS technology. It features low on-state resistance, superior switching performance, and high energy pulse handling capability. This device is well suited for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.
This document provides the design specifications for the Fairchild FQPF70N10, a 100V N-Channel enhancement mode power field effect transistor produced using proprietary planar stripe DMOS technology. The device is designed to minimize on-state resistance and provide superior switching performance, making it suitable for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.
| Drain-Source Voltage | 100 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 35 A |
| Maximum Junction Temperature | 175°C |
| On-Resistance (Typical) | 0.023 Ω |
| Gate Charge (Typical) | 85 nC |
| Reverse Transfer Capacitance (Typical) | 150 pF |
| Power Dissipation (Tj = 25°C) | 62 W |
| Operating Temperature Range | -55 to +175 °C |
The typical on-state resistance is 0.0232 Ω at Vgs = 10 V.
Yes, the device is 100% avalanche tested.
The maximum junction temperature rating is 175°C.