Key facts
- Brand
- Fairchild
- Model
- BCX70H
- Industry
- Industrial
- Documents
- 2
- Languages
- ZH · EN
- Last added
- 2012-07-12
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Fairchild BCX70H NPN Epitaxial Silicon Transistor Datasheet
The document is a technical specification sheet for the Fairchild Semiconductor Corporation's BCX70H general-purpose NPN epitaxial silicon transistor. It details the device's absolute maximum ratings, such as collector-base voltage and power dissipation, alongside key electrical characteristics including DC current gain (hFE), saturation voltages, and switching times. This manual is written in Chinese.
Read onlineFairchild BCX70H specifications
| Collector-Base Voltage (VCBO) | 45 V |
|---|---|
| Collector-Emitter Voltage (VCEO) | 45 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 200 mA |
| Collector Power Dissipation (PC) | 350 mW |
| Storage Temperature (TSTG) | -55 ~ 150 °C |
Source: Fairchild BCX70H NPN Epitaxial Silicon Transistor Datasheet
All Fairchild BCX70H documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the package type for the BCX70H?
The device uses an SOT-23 package.
From: Fairchild BCX70H NPN Epitaxial Silicon Transistor Datasheet
What are the pin assignments for the transistor?
Pin 1 is Base, Pin 2 is Emitter, and Pin 3 is Collector.
From: Fairchild BCX70H NPN Epitaxial Silicon Transistor Datasheet
What is the maximum collector current?
The maximum collector current is 200 mA.
From: FAIRCHILD BCX70H NPN Epitaxial Silicon Transistor datasheet(1)
What is the maximum collector current for the BCX70J transistor?
The maximum collector current is 200 mA.
From: FAIRCHILD BCX70H NPN Epitaxial Silicon Transistor datasheet(1)