Key facts
- Brand
- Fairchild
- Model
- BC516
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-12
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Fairchild BC516 PNP Darlington Transistor Datasheet
Datasheet 3 pages · 25 KB · EN
This document provides technical specifications for the Fairchild Semiconductor BC516 PNP Darlington Transistor. The device is designed for applications requiring extremely high current gain at currents up to 1mA. It features a TO-92 package with specific absolute maximum ratings, including a collector-emitter voltage of 30V and a total power dissipation of 625mW.
Read onlineFairchild BC516 specifications
| Collector-Emitter Voltage (VCEO) | 30 V |
|---|---|
| Collector-Base Voltage (VCBO) | 40 V |
| Emitter-Base Voltage (VEBO) | 10 V |
| Collector Current (Continuous) | 1 A |
| Total Power Dissipation | 625 mw |
| Operating and Storage Junction Temperature Range | -55 ~ +150 °C |
| DC Current Gain (hFE) | 30,000 |
All Fairchild BC516 documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What are the absolute maximum ratings for collector-emitter voltage and continuous collector current?
The device supports a maximum collector-emitter voltage of 30 V and a continuous collector current of 1 A.
What is the total power dissipation when the ambient temperature is 25°C?
The total power dissipation at an ambient temperature of 25°C is 625 mW.
What is the maximum collector current for the BC516?
The BC516 can handle a continuous collector current of 1 A.
What is the collector‑emitter breakdown voltage of the BC516?
The collector‑emitter breakdown voltage is 30 V.