Key facts
- Brand
- Fairchild
- Model
- BC328
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-12
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Fairchild BC327/328 PNP Epitaxial Silicon Transistor Datasheet
This document provides comprehensive technical specifications for the Fairchild Semiconductor BC327/BC328 series of PNP epitaxial silicon transistors. It includes absolute maximum ratings such as collector-emitter voltage and power dissipation, alongside detailed electrical characteristics like DC current gain (hFE) and breakdown voltages.
Read onlineFairchild BC328 specifications
| Collector Current (DC) | -800 mA |
|---|---|
| Collector Power Dissipation | 625 mW |
| Junction Temperature | 150 °C |
| Storage Temperature Range | -55 ~ 150 °C |
Source: Fairchild BC327/328 PNP Epitaxial Silicon Transistor Datasheet
All Fairchild BC328 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What are the applications for this transistor?
The device is suitable for AF-Driver stages and low power output stages.
From: Fairchild BC327/328 PNP Epitaxial Silicon Transistor Datasheet
Is this transistor compatible with other Fairchild models?
Yes, it serves as a complement to the BC337/BC338 series.
From: Fairchild BC327/328 PNP Epitaxial Silicon Transistor Datasheet
What are the suitable applications for these transistors?
They are suitable for AF-Driver stages and low power output stages.