The BCX70J is a general purpose NPN silicon transistor manufactured by Fairchild Semiconductor. Its maximum absolute ratings are VCBO=45V, VCEO=45V, VEBO=5V, IC=200mA, PC=350mW, TSTG=-55~150°C.
This document is a datasheet for the Fairchild Semiconductor BCX70J, an NPN epitaxial silicon transistor. It provides absolute maximum ratings such as a collector-emitter voltage of 45V and a collector current of 200mA. The datasheet also lists electrical characteristics including DC current gain, saturation voltages, and switching times under specific test conditions.
| Collector-Base Voltage | 45 V |
|---|---|
| Collector-Emitter Voltage | 45 V |
| Emitter-Base Voltage | 5 V |
| Collector Current | 200 mA |
| Collector Power Dissipation | 350 mW |
| Storage Temperature | -55 ~ 150 °C |
The maximum collector current is 200 mA.
The maximum collector current is 200 mA.
The maximum collector power dissipation is 350 mW.
The device can be stored between -55°C and 150°C.