The BCX70H is a NPN transistor produced by Fairchild Semiconductor Corporation. Its maximum collector voltage is 45V, maximum collector-emitter voltage is 45V, maximum emitter-base voltage is 5V, maximum collector current is 200mA, and maximum collector power dissipation is 350mW. The storage temperature is -55 to 150 degrees Celsius.
The document is a technical specification sheet for the Fairchild Semiconductor Corporation's BCX70H general-purpose NPN epitaxial silicon transistor. It details the device's absolute maximum ratings, such as collector-base voltage and power dissipation, alongside key electrical characteristics including DC current gain (hFE), saturation voltages, and switching times. This manual is written in Chinese.
| Collector-Base Voltage (VCBO) | 45 V |
|---|---|
| Collector-Emitter Voltage (VCEO) | 45 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 200 mA |
| Collector Power Dissipation (PC) | 350 mW |
| Storage Temperature (TSTG) | -55 ~ 150 °C |
The device uses an SOT-23 package.
Pin 1 is Base, Pin 2 is Emitter, and Pin 3 is Collector.