This document provides the design specifications, electrical characteristics, and absolute maximum ratings for the Fairchild Semiconductor BC327 and BC328 series of PNP epitaxial silicon transistors. These devices are designed for use in switching and amplifier applications, specifically suitable for AF-driver stages and low power output stages.
| Collector-Emitter Voltage (BC327) | -50 V |
|---|---|
| Collector-Emitter Voltage (BC328) | -30 V |
| Emitter-Base Voltage | 5 v |
| Collector Current (DC) | -800 mA |
| Collector Power Dissipation | 625 mW |
| Junction Temperature | 150 °C |
They are suitable for AF-Driver stages and low power output stages.