Key facts
- Brand
- Fairchild
- Model
- FDN339AN
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-11
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Fairchild FDN339AN N-Channel MOSFET Datasheet
This document is a technical datasheet for the Fairchild Semiconductor FDN339AN, an N-Channel 2.5V specified PowerTrench MOSFET. The device utilizes advanced trench technology to minimize on-state resistance while maintaining low gate charge for superior switching performance.
Key features include high power and current handling capability, making it suitable for applications such as DC/DC converters and load switches. The datasheet provides absolute maximum ratings, electrical characteristics, typical characteristics graphs, and package ordering information.
Fairchild FDN339AN specifications
| Drain-Source Voltage | 20 V |
|---|---|
| Gate-Source Voltage | +8 v |
| Pulsed Drain Current | 20 A |
| Operating Junction Temperature Range | -55 to +150 °C |
All Fairchild FDN339AN documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What are the maximum continuous and pulsed drain current ratings?
The device supports a continuous drain current of 3 A and a pulsed drain current of 20 A.
What is the maximum power dissipation for single operation?
The maximum power dissipation for single operation is 0.5 W.
What is the maximum drain‑source voltage rating?
The MOSFET can withstand up to 20 V drain‑source voltage.
From: Fairchild FDN339AN N-Channel 2.5V PowerTrench MOSFET Datasheet
What is the gate‑source voltage limit?
The gate‑source voltage is limited to +8 V.
From: Fairchild FDN339AN N-Channel 2.5V PowerTrench MOSFET Datasheet