Key facts
- Brand
- STMicroelectronics
- Model
- STGD3NB60S
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-08-08
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STMicroelectronics STGD3NB60S N-Channel 3A 600V DPAK Power MESH IGBT Preliminary Data
This document provides preliminary data for the STGD3NB60S, an N-Channel 3A - 600V DPAK Power MESH™ IGBT. The device features high input impedance and a very low on-voltage drop, optimized for low frequency applications below 1kHz. It is available in a surface-mounting DPAK (TO-252) power package in tape and reel format with suffix "T4".
Read onlineSTMicroelectronics STGD3NB60S specifications
| Collector-Emitter Voltage | 600 V |
|---|---|
| Collector Current (continuous) at Tc = 25 °C | 3 A |
| Collector Current (continuous) at Tc = 100 °C | 2.4 A |
| Total Dissipation at Tc = 25 °C | 40 W |
| Thermal Resistance Junction-case | 3.125 °C/W |
| Package Type | DPAK (TO-252) |
Source: STMicroelectronics STGD3NB60S N-Channel 3A 600V DPAK Power MESH IGBT Preliminary Data
All STMicroelectronics STGD3NB60S documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum operating junction temperature?
The maximum operating junction temperature is 150 °C.
From: STMicroelectronics STGD3NB60S N-Channel 3A 600V DPAK Power MESH IGBT Preliminary Data
What is the typical saturation voltage at 3A?
The typical collector-emitter saturation voltage is 1.5V when Vee is 15V and Ic is 3A.
From: STMicroelectronics STGD3NB60S N-Channel 3A 600V DPAK Power MESH IGBT Preliminary Data