This document describes the features and characteristics of the STGD3NB60S N-CHANNEL 3A - 600V DPAK Power MESH IGBT, including high input impedance, very low on-voltage drop (Vcesat), high current capability, and surface-mounting DPAK (TO-252) power package.
This document provides preliminary data for the STGD3NB60S, an N-Channel 3A - 600V DPAK Power MESH™ IGBT. The device features high input impedance and a very low on-voltage drop, optimized for low frequency applications below 1kHz. It is available in a surface-mounting DPAK (TO-252) power package in tape and reel format with suffix "T4".
| Collector-Emitter Voltage | 600 V |
|---|---|
| Collector Current (continuous) at Tc = 25 °C | 3 A |
| Collector Current (continuous) at Tc = 100 °C | 2.4 A |
| Total Dissipation at Tc = 25 °C | 40 W |
| Thermal Resistance Junction-case | 3.125 °C/W |
| Package Type | DPAK (TO-252) |
The maximum operating junction temperature is 150 °C.
The typical collector-emitter saturation voltage is 1.5V when Vee is 15V and Ic is 3A.