Key facts
- Brand
- STMicroelectronics
- Model
- STGP3NB60F
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-08-08
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STMicroelectronics STGP3NB60F/STGD3NB60F/STGP3NB60FD/STGF3NB60FD/STGB3NB60FD PowerMESH IGBT Datasheet
This document describes the STMicroelectronics PowerMESH™ IGBT family, specifically models STGP3NB60F, STGD3NB60F, STGP3NB60FD, STGF3NB60FD, and STGB3NB60FD. These N-channel devices are rated for 600V and 3A continuous current, optimized for high-frequency applications below 40 kHz due to their low switching times. The suffix 'F' identifies this family, while the suffix 'D' denotes versions with an internal collector-emitter diode.
Read onlineSTMicroelectronics STGP3NB60F specifications
| Collector Current (continuous) at Tc = 25°C | 6 A |
|---|---|
| Collector Current (continuous) at Tc = 100°C | 3 A |
| Total Dissipation at Tc = 25°C (TO-220/D2PAK) | 68 W |
| Max. Operating Junction Temperature | 150 °C |
| Collector-Emitter Saturation Voltage (Typ) | 2.4 V |
All STMicroelectronics STGP3NB60F documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What are the applications for these IGBTs?
These devices are designed for motor controls and SMPS and PFC in both hard switching and resonant topologies.
What is the maximum switching frequency?
The family is optimized to achieve very low switching times for frequency applications less than 40 kHz.
How much continuous collector current can the device handle at 25 °C?
It can handle up to 6 A continuous collector current at a case temperature of 25 °C.
From: STMicroelectronics STGP3NB60F / STGD3NB60F IGBT Datasheet