Key facts
- Brand
- STMicroelectronics
- Model
- HCF4007UB
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-08-10
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STMicroelectronics HCF4007UB Datasheet
Datasheet 9 pages · 122 KB · EN
The HCF4007UB is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology, available in DIP and SOP packages. It comprises three n-channel and three p-channel enhancement type MOS transistors with accessible terminals for constructing various typical circuits. The device supports medium speed operation with a typical propagation delay of 30ns at 10V supply voltage.
Read onlineSTMicroelectronics HCF4007UB specifications
| Supply Voltage | -0.5 to +22 V |
|---|---|
| Operating Temperature | -55 to +125 °C |
| Storage Temperature | -65 to +150 °C |
| Power Dissipation per Package | 200 mW |
| Input Leakage Current | 100nA (MAX) at VDD=18 V |
| Quiescent Current (VDD=5V) | 0.25 µA (Typ) |
All STMicroelectronics HCF4007UB documents by type
Datasheet 1
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the typical propagation delay at 10V?
The typical propagation delay is 30ns at 10V supply voltage.
What packages are available for the HCF4007UB?
The HCF4007UB is available in DIP and SOP packages.
What is the recommended supply voltage range?
The recommended supply voltage (Vop) is 3 to 20 V.
What are the absolute maximum ratings for supply voltage?
The device can tolerate a supply voltage from –0.5 to +22 V.