The HCF4007UB is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology available in DIP and SOP packages. The HCF4007UB type is comprised of three n-channel and three p-channel enhancement type MOS transistors. More complex functions are possible using multiple packages.
The HCF4007UB is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology, available in DIP and SOP packages. It comprises three n-channel and three p-channel enhancement type MOS transistors with accessible terminals for constructing various typical circuits. The device supports medium speed operation with a typical propagation delay of 30ns at 10V supply voltage.
| Supply Voltage | -0.5 to +22 V |
|---|---|
| Operating Temperature | -55 to +125 °C |
| Storage Temperature | -65 to +150 °C |
| Power Dissipation per Package | 200 mW |
| Input Leakage Current | 100nA (MAX) at VDD=18 V |
| Quiescent Current (VDD=5V) | 0.25 µA (Typ) |
The typical propagation delay is 30ns at 10V supply voltage.
The HCF4007UB is available in DIP and SOP packages.
The maximum input leakage current is 100nA at VDD=18V and TA=25°C.