The BUK453-100A/B is an N-channel enhancement mode power field-effect transistor manufactured by Philips Semiconductors. The device is packaged in a TO220AB package. It is intended for use in switched mode power supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.
This document is a product specification datasheet for the Philips BUK453-100A/B PowerMOS transistor. It describes an N-channel enhancement mode field-effect power transistor packaged in a plastic TO220AB envelope, designed for use in switched mode power supplies (SMPS), motor control, welding, and general purpose switching applications.
The datasheet provides comprehensive electrical characteristics including limiting values, static parameters such as drain-source breakdown voltage and on-state resistance, dynamic characteristics like turn-on delay time and capacitance, and reverse diode specifications. It also includes graphical data for thermal derating, safe operating areas, output characteristics, and avalanche energy ratings.
| Drain-source voltage (Vos) | 100 V |
|---|---|
| Drain current (DC) - BUK453-100B | 13 A |
| Junction temperature (Tj) | 175 °C |
| Package type | TO220AB |
The maximum junction temperature is 175 °C.
The maximum total power dissipation is 75 W when the junction temperature is 25°C.
The device has a maximum drain-source voltage rating of 100 V.
The maximum junction temperature is 175°C.