Key facts
- Brand
- Fairchild
- Model
- FQS4903
- Industry
- Industrial
- Documents
- 3
- Languages
- EN
- Last added
- 2012-07-12
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Fairchild Semiconductor FQS4903 500V Dual N-Channel MOSFET Datasheet
This document describes the Fairchild Semiconductor FQS4903, a dual N-channel enhancement mode power field effect transistor produced using proprietary planar stripe DMOS technology. The device is designed to minimize on-state resistance and provide superior switching performance, making it suitable for high-efficiency switch mode power supplies and electronic lamp ballasts.
Read onlineFairchild FQS4903 specifications
| Drain-Source Voltage | 500 V |
|---|---|
| Continuous Drain Current (Ta = 25°C) | 0.37 A |
| On-Resistance | 6.2 Ω |
| Gate Charge (Typical) | 6.3 nC |
| Reverse Transfer Capacitance (Typical) | 4.5 pF |
| Operating Temperature Range | -55 to +150 °C |
Source: Fairchild Semiconductor FQS4903 500V Dual N-Channel MOSFET Datasheet
All Fairchild FQS4903 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the operating temperature range?
The operating and storage temperature range is from -55 to +150 °C.
From: Fairchild Semiconductor FQS4903 500V Dual N-Channel MOSFET Datasheet
What is the maximum drain‑source voltage rating of the FQS4903?
The device is rated for a maximum drain‑source voltage of 500 V.
What continuous drain current can the FQS4903 handle at 25 °C?
It can conduct up to 0.37 A continuously at 25 °C.
What is the maximum drain‑source voltage for the FQS4903?
The device can withstand up to 500 V between drain and source.
What is the typical gate charge of the FQS4903?
The typical total gate charge is about 6.3 nC.