The document contains Dinghao's inventory, technical data, encyclopedia information, and hot news. The featured product in the document is QFET.
The FQS4903 is a 500 V dual N‑channel MOSFET built with Fairchild’s planar stripe DMOS technology, offering low on‑state resistance, fast switching, and high dv/dt capability. It is intended for high‑efficiency switch‑mode power supplies, power‑factor correction, and half‑bridge lamp ballast applications.
The document includes absolute maximum ratings, detailed electrical characteristics, typical performance curves, test circuit diagrams, and package dimensions (8‑lead SOP). It also contains trademark, disclaimer, and product‑status information from Fairchild Semiconductor.
| Drain‑Source Voltage (V_DSS) | 500 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 0.37 A |
| Pulsed Drain Current (I_DM) | 1.48 A |
| Gate‑Source Voltage (V_GS) | ±25 V |
| On‑Resistance (R_DS(on)) typical | 6.22 mΩ @ V_GS=10 V |
| Total Gate Charge (Q_g) typical | 6.3 nC |
| Output Capacitance (C_oss) typical | 35 pF |
| Thermal Resistance Junction‑to‑Ambient (RθJA) | 62.5 °C/W |
| Power Dissipation (P_D) @ 25 °C | 2.0 W |
The device can withstand up to 500 V between drain and source.
The typical total gate charge is about 6.3 nC.
It is supplied in an 8‑lead SOP (8SOP) package.