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The FQS4903 is a 500 V dual N‑channel MOSFET built with Fairchild’s planar stripe DMOS technology, offering low on‑state resistance, low gate charge, and fast switching for high‑efficiency power supplies and lamp ballasts.
The datasheet lists absolute maximum ratings, detailed electrical characteristics such as drain current, gate charge, capacitances, and switching times, as well as typical performance curves and the 8‑SOP package dimensions.
| Drain‑Source Voltage (VDS) | 500 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 0.37 A |
| Gate‑Source Voltage (VGS) rating | ±25 V |
| On‑Resistance (RDS(on)) @ VGS=10 V | 6.22 mΩ |
| Power Dissipation (PD) @ 25 °C | 2.0 W |
The device is rated for a maximum drain‑source voltage of 500 V.
It can conduct up to 0.37 A continuously at 25 °C.