Key facts
- Brand
- Fairchild
- Model
- FQA170N06
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-12
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Fairchild Semiconductor FQA170N06 60V N-Channel MOSFET Datasheet
This document is a datasheet for the Fairchild Semiconductor FQA170N06, a 60V N-Channel enhancement mode power field effect transistor. Produced using proprietary planar stripe DMOS technology, the device is designed for low voltage applications such as automotive systems, DC/DC converters, and power management in portable products. Key features include a low on-state resistance of 0.00562 ohms, low gate charge, and 100% avalanche testing.
Read onlineFairchild FQA170N06 specifications
| Drain-Source Voltage | 60 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 170 A |
| On-Resistance | 0.00562 Ohms |
| Maximum Junction Temperature | 175°C |
| Package Type | TO-3PN |
Source: Fairchild Semiconductor FQA170N06 60V N-Channel MOSFET Datasheet
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Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum junction temperature rating?
The maximum junction temperature rating is 175°C.
From: Fairchild Semiconductor FQA170N06 60V N-Channel MOSFET Datasheet
Is the device avalanche tested?
Yes, the device is 100% avalanche tested.
From: Fairchild Semiconductor FQA170N06 60V N-Channel MOSFET Datasheet
What is the maximum continuous drain current of the FQA170N06 at 25 °C?
The device can handle a continuous drain current of 170 A at a case temperature of 25 °C.
What is the rated drain‑source voltage for this MOSFET?
The maximum drain‑source voltage rating is 60 V.