This document is about QFET. QFET is a new type of semiconductor device that has high efficiency, low power consumption and high reliability. QFET has a wide range of applications, including power electronics, communications, medical and other fields.
This document describes the Fairchild Semiconductor FQS4903, a dual N-channel enhancement mode power field effect transistor produced using proprietary planar stripe DMOS technology. The device is designed to minimize on-state resistance and provide superior switching performance, making it suitable for high-efficiency switch mode power supplies and electronic lamp ballasts.
| Drain-Source Voltage | 500 V |
|---|---|
| Continuous Drain Current (Ta = 25°C) | 0.37 A |
| On-Resistance | 6.2 Ω |
| Gate Charge (Typical) | 6.3 nC |
| Reverse Transfer Capacitance (Typical) | 4.5 pF |
| Operating Temperature Range | -55 to +150 °C |
The operating and storage temperature range is from -55 to +150 °C.