Key facts
- Brand
- Fairchild
- Model
- FQPF630
- Industry
- Industrial
- Documents
- 3
- Languages
- EN
- Last added
- 2012-07-12
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Fairchild Semiconductor FQPF630 N-Channel MOSFET Datasheet
This document is a datasheet for the Fairchild Semiconductor FQPF630, an N-Channel enhancement mode power field effect transistor. The device utilizes the company's proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance. It is designed for applications such as high efficiency switching DC/DC converters, switch mode power supplies, and motor control.
Read onlineFairchild FQPF630 specifications
| Drain-Source Voltage | 200 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 6.3 A |
| On-Resistance | 0.42 @Vgg = 10 V |
| Gate Charge (Typical) | 19 nC |
| Power Dissipation (Tc = 25°C) | 38 W |
| Operating Temperature Range | -55 to +150 °C |
Source: Fairchild Semiconductor FQPF630 N-Channel MOSFET Datasheet
All Fairchild FQPF630 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum single pulsed avalanche energy rating?
The FQPF630 can withstand a single pulsed avalanche energy of up to 164 mJ.
From: Fairchild Semiconductor FQPF630 N-Channel MOSFET Datasheet
What is the maximum safe operating temperature range for this component?
The device is rated for operation and storage between -55°C and +150°C.
From: Fairchild Semiconductor FQPF630 N-Channel MOSFET Datasheet
What is the maximum drain‑source voltage rating?
The FQPF630 is rated for a maximum drain‑source voltage of 200 V.
What continuous drain current can the device handle at 25 °C?
It can conduct up to 6.3 A continuously at a case temperature of 25 °C.
What is the maximum drain‑source voltage for the FQPF630?
The device is rated for a maximum drain‑source voltage of 200 V.
What continuous drain current can the FQPF630 handle at 25 °C?
It can conduct up to 6.3 A continuously at a case temperature of 25 °C.