Key facts
- Brand
- Fairchild
- Model
- FQPF9P25
- Industry
- Industrial
- Documents
- 3
- Languages
- EN
- Last added
- 2012-07-12
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DatasheetFAIRCHILD FQPF9P25 250V P-Channel MOSFET handbook
FAIRCHILD FQPF9P25 250V P-Channel MOSFET handbook
Datasheet
FQPF9P25 is a 250V P-channel MOSFET produced by Fairchild. It features low RDS(on), low gate charge, low Crss, and fast switching.
Read onlineFairchild FQPF9P25 specifications
| Drain‑Source Voltage (V_DSS) | -250 V |
|---|---|
| Continuous Drain Current (I_D) | -6.0 A |
| Typical Gate Charge (Q_g) | 29 nC |
| Typical Reverse Transfer Capacitance (C_oss) | 27 pF |
| Power Dissipation (P_D) at 25 °C | 50 W |
| Thermal Resistance Junction‑to‑Case (RθJC) | 2.5 °C·W |
| Thermal Resistance Junction‑to‑Ambient (RθJA) | 62.5 °C·W |
All Fairchild FQPF9P25 documents by type
Datasheet 1
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage of the FQPF9P25?
The maximum drain‑source voltage is -250 V.
What is the typical gate charge for this MOSFET?
The typical gate charge is 29 nC.
What is the maximum continuous drain current?
The device can handle -6.0 A continuously at 25 °C and -3.9 A at 100 °C.
What is the typical gate charge of the FQPF9P25?
The typical gate charge is 29 nC.