FQPF9P25 is a 250V P-channel MOSFET produced by Fairchild. It features low RDS(on), low gate charge, low Crss, and fast switching.
The Fairchild Semiconductor FQPF9P25 is a P-Channel enhancement mode power field effect transistor produced using the company's proprietary planar stripe, DMOS technology. This advanced technology is tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in avalanche and commutation modes, making the device well-suited for high efficiency switching DC/DC converters.
The device features a continuous drain current of -6.0A at 25°C, a drain-source breakdown voltage of -250V, and a total gate charge of 29 nC. It includes a built-in body diode with a maximum forward voltage of 5.0V and is available in a TO-220F package.
| Drain-Source Voltage | -250 V |
|---|---|
| Continuous Drain Current (25°C) | -6.0 A |
| Continuous Drain Current (100°C) | -3.9 A |
| Pulsed Drain Current | -24 A |
| Power Dissipation (25°C) | 50 W |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | TO-220F |
| Gate Threshold Voltage | -3.0 to 5.0 V |
| Total Gate Charge | 29 to 38 nC |
The maximum continuous drain current at 25°C is -6.0 A.
Yes, these devices are well suited for high efficiency switching DC/DC converters.
The FQPF9P25 is available in a TO-220F package.