Key facts
- Brand
- Fairchild
- Model
- FQPF9N50
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-12
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Fairchild FQPF9N50 MOSFET Datasheet
The FQPF9N50 is a 500 V N‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It offers low gate charge, low output capacitance, fast switching and 100 % avalanche tested capability, making it suitable for high‑efficiency switch‑mode power supplies and other demanding applications.
The document provides absolute maximum ratings, electrical characteristics, typical performance curves, package dimensions (TO‑220F) and test circuit examples. It also includes trademark, disclaimer and product status information from Fairchild Semiconductor.
Fairchild FQPF9N50 specifications
| Drain‑Source Voltage (VDS) | 500 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 5.3 A |
| Pulsed Drain Current (ID) (Note 1) | 21 A |
| Gate‑Source Voltage (VGS) | +30 V |
| Power Dissipation (PD) @ 25 °C | 50 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 2.5 °C/W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 62.5 °C/W |
| Typical Gate Charge (Qg) | 28 nC |
| Typical Output Capacitance (Coss) | 210 pF |
All Fairchild FQPF9N50 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage for the FQPF9N50?
The device is rated for a maximum drain‑source voltage of 500 V.
How much continuous drain current can the FQPF9N50 handle at 25 °C?
It can conduct up to 5.3 A continuous drain current at 25 °C.
What is the maximum drain‑source voltage rating for the FQPF9N50?
The maximum drain‑source voltage (V_DSS) is 500 V.
What continuous drain current can the FQPF9N50 handle at 25 °C?
It can handle a continuous drain current of 5.3 A at 25 °C.