Key facts
- Brand
- Fairchild
- Model
- FQPF9N50CF
- Industry
- Industrial
- Documents
- 3
- Languages
- EN
- Last added
- 2012-07-12
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Fairchild Semiconductor FQPF9N50CF 500V N-Channel MOSFET Datasheet
This document is a technical datasheet for the Fairchild Semiconductor FQPF9N50CF, an N-Channel enhancement mode power field effect transistor. The device utilizes proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance.
Key specifications include a drain-source voltage rating of 500V, a continuous drain current of 9A at 25°C, and a static drain-source on-resistance (RDS(on)) of 0.85 Ω @ VGS = 10 V. The datasheet provides detailed electrical characteristics, thermal data, typical performance curves, mechanical dimensions for the TO-220F package, and application notes regarding test circuits.
Fairchild FQPF9N50CF specifications
| Drain-Source Voltage (VDSS) | 500 V |
|---|---|
| Continuous Drain Current (ID) @ TC = 25°C | 9 A |
| Static Drain-Source On-Resistance (RDS(on)) | 0.85 Ω @ VGS = 10 V |
| Total Gate Charge (Qg) | 28 nC (typical) |
| Reverse Transfer Capacitance (Crss) | 24 pF (typical) |
| Package Type | TO-220F |
Source: Fairchild Semiconductor FQPF9N50CF 500V N-Channel MOSFET Datasheet
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Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the typical reverse recovery time of the body diode?
The typical reverse recovery time for the fast recovery body diode is 100ns.
From: Fairchild Semiconductor FQPF9N50CF 500V N-Channel MOSFET Datasheet
What is the maximum pulsed avalanche energy?
The single pulsed avalanche energy (EAS) is rated at 360 mJ.
From: Fairchild Semiconductor FQPF9N50CF 500V N-Channel MOSFET Datasheet
What is the maximum drain‑source voltage of the FQPF9N50CF?
The device is rated for a maximum drain‑source voltage of 500 V.
What continuous drain current can the FQPF9N50CF handle at 25 °C?
It can continuously conduct up to 9 A at a case temperature of 25 °C.
What is the maximum drain‑source voltage rating?
The device is rated for a maximum drain‑source voltage of 500 V.
What continuous drain current can the MOSFET handle at 25 °C?
It can conduct up to 9 A continuously at 25 °C.