The FQPF9P25 is a P‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology, optimized for low on‑state resistance and fast switching. It is suited for high‑efficiency DC/DC converters and can withstand high energy pulses in avalanche and commutation modes.
Key features include a continuous drain current of -6 A at 25 °C, typical gate charge of 29 nC, on‑resistance of 0.62 Ω, and a power dissipation rating of 50 W. The device is supplied in a TO‑220F package and is 100 % avalanche tested.
| Drain‑Source Voltage (VDS) | -250 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | -6.0 A |
| Continuous Drain Current (ID) at 100 °C | -3.9 A |
| Typical Gate Charge (Qg) | 29 nC |
| On‑Resistance (RDS(on)) | 0.62 Ω |
| Power Dissipation (PD) | 50 W |
| Thermal Resistance Junction‑to‑Case (RθJC) | 2.5 °C/W |
| Thermal Resistance Junction‑to‑Ambient (RθJA) | 62.5 °C/W |
The device can handle -6.0 A continuously at 25 °C and -3.9 A at 100 °C.
The typical gate charge is 29 nC.
It is supplied in a TO‑220F package.
Yes, it is 100 % avalanche tested with a single‑pulse energy rating of 650 mJ.