Key facts
- Brand
- Fairchild
- Model
- FQPF9N08
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-12
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Fairchild FQPF9N08 80V N-Channel MOSFET Datasheet
The FQPF9N08 MOSFET is an N‑Channel enhancement mode power transistor built with Fairchild’s planar stripe DMOS technology. It is designed for low‑voltage applications such as automotive, DC‑DC converters, and motor control, offering low on‑state resistance and fast switching performance.
Key specifications include an 80 V drain‑source rating, 7 A continuous drain current at 25 °C, 28 A pulsed current, low gate charge (5.9 nC), and a maximum junction temperature of 175 °C. The device is supplied in a TO‑220F package with defined thermal resistance values.
Fairchild FQPF9N08 specifications
| Drain‑Source Voltage (VDS) | 80 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | 7.0 A |
| Pulsed Drain Current | 28 A |
| Gate Charge (Qg) | 5.9 nC (typical) |
| On‑Resistance (RDS(on)) | 0.21 Ω (typical) |
| Maximum Junction Temperature | 175 °C |
| Thermal Resistance, Junction‑to‑Case | 6.52 °C/W |
| Package Type | TO‑220F |
All Fairchild FQPF9N08 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum continuous drain current at 25 °C?
The device can handle a continuous drain current of 7.0 A at a case temperature of 25 °C.
What is the avalanche energy rating of the FQPF9N08?
The single pulsed avalanche energy is rated at 55 mJ.
What is the continuous drain current rating?
The continuous drain current is 7.0 A at 25 °C (4.95 A at 100 °C).
What is the typical gate charge of the FQPF9N08?
The typical total gate charge is 5.9 nC.