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- Brand
- Fairchild
- Model
- FQPF9N90C
- Industry
- Industrial
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- 2
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- EN
- Last added
- 2012-07-12
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Fairchild Semiconductor FQP9N90C/FQPF9N90C 900V N-Channel MOSFET Datasheet
This document provides design specifications for the FQP9N90C and FQPF9N90C, which are N-Channel enhancement mode power field effect transistors produced using Fairchild's proprietary planar stripe DMOS technology. These devices feature low on-state resistance and superior switching performance, making them well-suited for high efficiency switched mode power supplies.
Read onlineFairchild FQPF9N90C specifications
| Drain-Source Voltage (Vdss) | 900 V |
|---|---|
| Continuous Drain Current (Tg = 25°C) | 8.0 A |
| Continuous Drain Current (Tg = 100°C) | 2.8 A |
| Pulsed Drain Current | 32 A |
| Gate-Source Voltage | +/- 30 V |
| Single Pulsed Avalanche Energy | 900 mJ |
| Power Dissipation (Tg = 25°C) | 205 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
Source: Fairchild Semiconductor FQP9N90C/FQPF9N90C 900V N-Channel MOSFET Datasheet
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Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What are the maximum continuous drain currents at different temperatures?
The device supports a continuous current of 8.0 A at 25°C and 2.8 A at 100°C.
From: Fairchild Semiconductor FQP9N90C/FQPF9N90C 900V N-Channel MOSFET Datasheet
What is the maximum single pulsed avalanche energy rating?
The FQP9N90C can withstand a single pulsed avalanche energy of up to 900 mJ.
From: Fairchild Semiconductor FQP9N90C/FQPF9N90C 900V N-Channel MOSFET Datasheet
What is the maximum drain‑source voltage for the FQP9N90C/FQPF9N90C?
The device is rated for a maximum drain‑source voltage of 900 V.
From: Fairchild FQP9N90C/FQPF9N90C 900V N-Channel MOSFET Datasheet
Which package styles are available for this MOSFET?
The MOSFET is offered in TO‑220 and TO‑220F packages.
From: Fairchild FQP9N90C/FQPF9N90C 900V N-Channel MOSFET Datasheet