This document describes the features and characteristics of the FQPF9N50CF 500V N-Channel MOSFET product.
This document is a technical datasheet for the Fairchild Semiconductor FQPF9N50CF, an N-Channel enhancement mode power field effect transistor. The device utilizes proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance.
Key specifications include a drain-source voltage rating of 500V, a continuous drain current of 9A at 25°C, and a static drain-source on-resistance (RDS(on)) of 0.85 Ω @ VGS = 10 V. The datasheet provides detailed electrical characteristics, thermal data, typical performance curves, mechanical dimensions for the TO-220F package, and application notes regarding test circuits.
| Drain-Source Voltage (VDSS) | 500 V |
|---|---|
| Continuous Drain Current (ID) @ TC = 25°C | 9 A |
| Static Drain-Source On-Resistance (RDS(on)) | 0.85 Ω @ VGS = 10 V |
| Total Gate Charge (Qg) | 28 nC (typical) |
| Reverse Transfer Capacitance (Crss) | 24 pF (typical) |
| Package Type | TO-220F |
The typical reverse recovery time for the fast recovery body diode is 100ns.
The single pulsed avalanche energy (EAS) is rated at 360 mJ.
The device operates and can be stored in a temperature range of -55 to +150 °C.