FQPF9N50CF is a 500V N-Channel MOSFET with features including 9A current, 0.85Ω RDS(on), low gate charge, fast switching, 100% avalanche tested, etc.
The FQPF9N50CF is a 500 V N‑Channel enhancement mode power MOSFET designed for high‑efficiency switched‑mode power supplies, active power factor correction, and half‑bridge lamp ballast applications. It features low gate charge (typical 28 nC), low output capacitance (typical 24 pF), fast switching, and a robust avalanche capability.
Key specifications include a continuous drain current of 9 A at 25 °C, a pulsed drain current of 36 A, and a maximum power dissipation of 44 W. The device is supplied in a TO‑220F package with thermal resistance values of 2.86 °C·W (junction‑to‑case) and 62.5 °C·W (junction‑to‑ambient). Detailed electrical characteristics, typical performance curves, and test circuit diagrams are provided.
| Drain‑Source Voltage (V_DSS) | 500 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 9 A |
| Continuous Drain Current (I_D) @ 100 °C | 5.4 A |
| Pulsed Drain Current | 36 A |
| Gate‑Source Voltage (V_GS) | +30 V |
| Power Dissipation (P_D) @ 25 °C | 44 W |
| Thermal Resistance Junction‑to‑Case (RθJC) | 2.86 °C·W |
| Thermal Resistance Junction‑to‑Ambient (RθJA) | 62.5 °C·W |
The device is rated for a maximum drain‑source voltage of 500 V.
It can continuously conduct up to 9 A at a case temperature of 25 °C.
The typical gate charge is 28 nC, with a maximum of about 35 nC.