Key facts
- Brand
- Fairchild
- Model
- FQPF11P06
- Industry
- Industrial
- Documents
- 3
- Languages
- EN
- Last added
- 2012-07-12
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Fairchild FQPF11P06 60V P-Channel MOSFET Datasheet
This document is a datasheet for the Fairchild FQPF11P06, a P-Channel enhancement mode power field effect transistor. The device utilizes Fairchild's proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance. It is well-suited for low voltage applications such as automotive systems, DC/DC converters, and high efficiency switching for power management in portable products.
Read onlineFairchild FQPF11P06 specifications
| Drain-Source Voltage | -60 V |
|---|---|
| Drain Current - Continuous | -8.6 A |
| Drain Current - Pulsed | -34.4 A |
| Gate-Source Voltage | +25 V |
| Single Pulsed Avalanche Energy | 160 mJ |
| Power Dissipation | 30 W |
| Operating Temperature Range | -55 to +175 °C |
| Package Type | TO-220F |
All Fairchild FQPF11P06 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum junction temperature rating?
The maximum junction temperature rating is 175°C.
What is the typical gate charge?
The typical gate charge is 13 nC.
What is the maximum drain‑source voltage rating?
The device is rated for a maximum drain‑source voltage of -60 V.
What is the typical gate charge of the FQPF11P06?
The typical gate charge is 13 nC.
What is the maximum drain‑source voltage rating?
The device is rated for a maximum drain‑source voltage of -60 V.
What is the typical gate charge of the FQPF11P06?
The typical gate charge is about 13 nC.