FQPF11P06 is a 60V P-channel MOSFET produced by Fairchild Semiconductor Corporation. This device is suitable for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
The FQPF11P06 is a P‑Channel enhancement mode power MOSFET fabricated with Fairchild’s planar stripe DMOS technology. It is optimized for low on‑state resistance, fast switching, and high avalanche energy, making it suitable for automotive, DC/DC converters, and portable power‑management designs.
Key features include a -60 V drain‑source rating, continuous drain current of 8.6 A at 25 °C, low gate charge (~13 nC), low output capacitance (~45 pF), and a maximum junction temperature of 175 °C. The device is supplied in a TO‑220F package with thermal resistance values of 5 °C·W (junction‑to‑case) and 62.5 °C·W (junction‑to‑ambient).
| Drain-Source Voltage (V_DSS) | -60 V |
|---|---|
| Continuous Drain Current (I_D) @ 25°C | 8.6 A |
| Continuous Drain Current (I_D) @ 100°C | 6.08 A |
| Pulsed Drain Current (I_D) (max) | 34.4 A |
| Gate-Source Voltage (V_GS) | +25 V |
| Power Dissipation (P_D) @ 25°C | 30 W |
| Maximum Junction Temperature (T_J) | 175 °C |
| Junction‑to‑Case Thermal Resistance (RθJC) | 5.0 °C·W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 62.5 °C·W |
| Typical Gate Charge (Qg) | 13 nC |
| Reverse Transfer Capacitance (C_rss) | 45 pF |
The device is rated for a maximum drain‑source voltage of -60 V.
The typical gate charge is about 13 nC.
It is supplied in a TO‑220F package.