FQPF11P06 is a 60V P-channel MOSFET from Fairchild, which features low gate charge, low Crss, fast switching, high dv/dt capability, etc.
This document is a datasheet for the Fairchild FQPF11P06, a P-Channel enhancement mode power field effect transistor. The device utilizes Fairchild's proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance. It is well-suited for low voltage applications such as automotive systems, DC/DC converters, and high efficiency switching for power management in portable products.
| Drain-Source Voltage | -60 V |
|---|---|
| Drain Current - Continuous | -8.6 A |
| Drain Current - Pulsed | -34.4 A |
| Gate-Source Voltage | +25 V |
| Single Pulsed Avalanche Energy | 160 mJ |
| Power Dissipation | 30 W |
| Operating Temperature Range | -55 to +175 °C |
| Package Type | TO-220F |
The maximum junction temperature rating is 175°C.
The typical gate charge is 13 nC.
Yes, the device is 100% avalanche tested.