Key facts
- Brand
- Fairchild
- Model
- FQPF11N40C
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-12
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Fairchild FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Datasheet
Datasheet 10 pages · 1.2 MB · EN
This document provides technical specifications for the Fairchild FQP11N40C and FQPF11N40C, which are 400V N-Channel enhancement mode power MOSFETs produced using proprietary planar stripe DMOS technology. Key features include a typical on-state resistance of 9.52 mΩ at Vgs = 10V, low gate charge (typical 28 nC), and fast switching performance.
Read onlineFairchild FQPF11N40C specifications
| Drain-Source Voltage | 400 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 10.5 A |
| On-State Resistance (Vgs = 10 V) | 9.52 mΩ |
| Gate Charge (Typical) | 28 nC |
| Thermal Resistance, Junction-to-Case | 0.93 °CAV |
Source: Fairchild FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Datasheet
All Fairchild FQPF11N40C documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the single pulsed avalanche energy rating?
The device can withstand a single pulsed avalanche energy of 360 mJ.
From: Fairchild FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Datasheet
What is the maximum drain‑source voltage rating?
The device is rated for a maximum drain‑source voltage of 400 V.
What continuous drain current can the MOSFET handle at 25 °C?
It can handle a continuous drain current of 10.5 A at 25 °C.