Key facts
- Brand
- Fairchild
- Model
- FQPF12N20
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-09
Start here
Fairchild FQPF12N20 200V N-Channel MOSFET Datasheet
The FQPF12N20 is a 200 V N‑Channel enhancement‑mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It offers low on‑resistance, low gate charge and fast switching, making it suitable for high‑efficiency DC‑DC converters, SMPS, motor control and UPS applications.
The document provides absolute maximum ratings, detailed electrical characteristics, typical performance curves, and mechanical dimensions for the TO‑220F package, along with safety and trademark notices.
Fairchild FQPF12N20 specifications
| Drain‑Source Voltage (VDS) | 200 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 8.2 A |
| Pulsed Drain Current (ID) @ 100 °C | 32.8 A |
| Gate‑Source Voltage (VGS) | +30 V |
| Power Dissipation (PD) @ 25 °C | 45 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 2.78 °C·W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 62.5 °C·W |
| On‑Resistance (RDS(on)) typical | 0.28 Ω @ VGS=10 V |
| Total Gate Charge (Qg) typical | 18 nC |
All Fairchild FQPF12N20 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage for the FQPF12N20?
The device is rated for a maximum drain‑source voltage of 200 V.
What continuous drain current can the MOSFET handle at 25 °C?
It can conduct up to 8.2 A continuously at a case temperature of 25 °C.
What is the maximum continuous drain current for the FQPF12N20?
The continuous drain current at 25 °C is 8.2 A.
What is the pulsed drain current rating?
The device can handle a pulsed drain current of 32.8 A.