Key facts
- Brand
- Fairchild
- Model
- FQPF12N60
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-09
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DatasheetFAIRCHILD FQPF12N60 600V N-Channel MOSFET datasheet
Fairchild FQPF12N60 specifications
| Drain‑Source Voltage (V_DSS) | 600 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 5.8 A |
| Continuous Drain Current (I_D) @ 100 °C | 3.7 A |
| Pulsed Drain Current (I_Dp) | 23 A |
| Gate‑Source Voltage (V_GS) | ±30 V |
| Power Dissipation (P_D) @ 25 °C | 55 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 2.27 °C/W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 62.5 °C/W |
| Total Gate Charge (Q_g) | 42 nC (typical) |
| Reverse Transfer Capacitance (Crss) | 25 pF (typical) |
| Package Type | TO‑220F |
All Fairchild FQPF12N60 documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum continuous drain current of the FQPF12N60?
The device can conduct a continuous drain current of 5.8 A at 25 °C (3.7 A at 100 °C).
What package does the FQPF12N60 use?
The FQPF12N60 is supplied in a TO‑220F package.