This document describes the features and characteristics of the FQPF11P06, a 60V P-Channel MOSFET produced by Fairchild. This product utilizes advanced DMOS technology, providing low on-state resistance, superior switching performance, and the ability to withstand high energy pulses. It is well-suited for low voltage applications, such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
The FQPF11P06 is a P‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is optimized for low on‑state resistance, fast switching, and high avalanche energy, making it suitable for automotive, DC/DC converters, and portable power‑management applications.
Key specifications include a -60 V drain‑source rating, -8.6 A continuous drain current at 25 °C, -34.4 A pulsed current, and a maximum junction temperature of 175 °C. The datasheet also provides typical electrical characteristics, gate‑charge data, and test circuit waveforms for evaluating performance.
| Drain‑Source Voltage (VDS) | -60 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | -8.6 A |
| Pulsed Drain Current (ID) (Note 1) | -34.4 A |
| Gate‑Source Voltage (VGS) | +25 V |
| Power Dissipation (PD) @ 25 °C | 30 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 5.0 °C·W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 62.5 °C·W |
| Maximum Junction Temperature | 175 °C |
| Typical Gate Charge (Qg) | 13 nC |
| Typical Reverse Transfer Capacitance (Crss) | 45 pF |
The device is rated for a maximum drain‑source voltage of -60 V.
The typical gate charge is 13 nC.
The MOSFET can operate up to 175 °C junction temperature.
The continuous drain current is -8.6 A at 25 °C.