Key facts
- Brand
- Fairchild
- Model
- FQPF10N60C
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-09
Start here
Fairchild FQP10N60C/FQPF10N60C Datasheet
The Fairchild FQP10N60C and FQPF10N60C are 600 V N‑Channel power MOSFETs designed for high‑efficiency switched‑mode power supplies, active power factor correction, and electronic lamp ballasts. They feature low gate charge (typical 44 nC) and low output capacitance, providing fast switching and low loss.
The document provides absolute maximum ratings, detailed electrical characteristics, typical performance curves, mechanical dimensions for TO‑220 and TO‑220F packages, and test circuit waveforms. It also includes trademark information and legal notices from Fairchild Semiconductor.
Fairchild FQPF10N60C specifications
| Drain‑Source Voltage (VDS) | 600 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | 9.5 A |
| Pulsed Drain Current (ID,pulse) | 38 A |
| Gate‑Source Voltage (VGS) | +30 V |
| Power Dissipation (PD) at 25 °C | 156 W |
| Thermal Resistance Junction‑to‑Case (RθJC) | 0.8 °C/W |
| Output Capacitance (Coss) typical | 166 pF |
| Reverse Transfer Capacitance (Crss) typical | 18 pF |
All Fairchild FQPF10N60C documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum continuous drain current for the FQP10N60C?
The maximum continuous drain current at 25 °C is 9.5 A.
What is the maximum drain‑source voltage?
The MOSFET can withstand up to 600 V drain‑source voltage.
What is the typical gate charge of the device?
The typical gate charge is 44 nC.