Key facts
- Brand
- Fairchild
- Model
- FQPF12P20
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-09
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Fairchild FQPF12P20 200V P-Channel MOSFET Datasheet
The FQPF12P20 is a P‑Channel enhancement mode power MOSFET fabricated with Fairchild’s planar stripe DMOS technology. It is optimized for low on‑state resistance, fast switching, and high‑energy pulse handling, making it suitable for efficient DC/DC converter applications.
Key specifications include a -200 V drain‑source rating, -7.3 A continuous drain current, typical gate charge of 31 nC, on‑resistance around 0.47 Ω, and a power dissipation capability of 50 W. Thermal resistance values are 2.5 °C·W (junction‑to‑case) and 62.5 °C·W (junction‑to‑ambient), with an operating temperature range from –55 °C to +150 °C.
Fairchild FQPF12P20 specifications
| Drain‑Source Voltage (V_DSS) | -200 V |
|---|---|
| Continuous Drain Current (I_D) at 25 °C | -7.3 A |
| Typical Gate Charge (Qg) | 31 nC |
| Power Dissipation (P_D) at 25 °C | 50 W |
| Thermal Resistance Junction‑to‑Case | 2.5 °C·W |
| Thermal Resistance Junction‑to‑Ambient | 62.5 °C·W |
| Operating Temperature Range | -55 °C to +150 °C |
All Fairchild FQPF12P20 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum continuous drain current?
The device can handle a continuous drain current of -7.3 A at 25 °C.
What is the typical gate charge of the FQPF12P20?
The typical gate charge is 31 nC.
What is the maximum drain‑source voltage rating?
The FQPF12P20 can withstand a drain‑source voltage of up to –200 V.
What continuous drain current can the device handle at 25 °C?
It is rated for a continuous drain current of 7.3 A at 25 °C.