Key facts
- Brand
- Fairchild
- Model
- FQPF11N50CF
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-12
Start here
Fairchild FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET Datasheet
The document describes the Fairchild FQP11N50CF and FQPF11N50CF, which are N-Channel enhancement mode power field effect transistors produced using Fairchild's proprietary planar stripe DMOS technology. These devices are designed to minimize on-state resistance and provide superior switching performance, making them suitable for high efficiency switched mode power supplies and active power factor correction applications.
Read onlineFairchild FQPF11N50CF specifications
| Drain-Source Voltage | 500 V |
|---|---|
| Continuous Drain Current (Tg = 25°C) | 11 A |
| Continuous Drain Current (Tg = 100°C) | 7 A |
| Gate-Source Voltage | +30 V |
| Single Pulsed Avalanche Energy | 670 mJ |
| Power Dissipation (Tc = 25°C) | 195 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction-to-Case | 0.64 °C/W |
| Static Drain-Source On-Resistance | 0.55 Ω |
| Total Gate Charge | 43 nC |
Source: Fairchild FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET Datasheet
All Fairchild FQPF11N50CF documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What are the main features of the FQP11N50CF?
The device features 11A current, 500V rating, low gate charge, low Crss, fast switching, and a fast recovery body diode.
From: Fairchild FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET Datasheet
What applications are these MOSFETs well suited for?
They are well suited for high efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology.
From: Fairchild FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET Datasheet
What is the maximum drain‑source voltage for the FQP11N50CF/FQPF11N50CF MOSFET?
The maximum drain‑source voltage is 500 V.
What is the typical gate charge of these MOSFETs?
The typical gate charge is 43 nC.