The STTH302S is a high-efficiency ultrafast diode that is suitable for switching mode base drive & transistor circuits and other power switching applications.
The STTH302S is a high‑efficiency ultra‑fast diode designed for switching‑mode base‑drive, transistor circuits, and free‑wheeling applications in power supplies. It features very low conduction and switching losses, a low forward voltage, and a high junction temperature capability.
The document lists absolute ratings, static and dynamic electrical characteristics, thermal parameters, and package mechanical data, enabling designers to evaluate performance, thermal behavior, and mechanical fit for their circuits.
| Average forward current (IF(av)) | 3 A |
|---|---|
| Repetitive peak reverse voltage (VRRM) | 200 V |
| Maximum junction temperature (Tj max) | 175 °C |
| Maximum forward voltage (Vr max) | 0.75 V |
| Maximum reverse recovery time (trr max) | 35 ns |
| Junction‑to‑lead thermal resistance (RθJC) | 20 °C/W |
| Package thickness (Ti) | 1.90 – 2.45 mm |
The maximum repetitive peak reverse voltage is 200 V.
The average forward current (IF(av)) is rated at 3 A.
The device can operate up to a maximum junction temperature of 175 °C.
The reverse recovery time (trr) is specified as a maximum of 35 ns.