This document describes the features and characteristics of Fairchild Semiconductor Corporation's FQP9N90C/FQPF9N90C QFET TM 900V N-Channel MOSFET, including low on-state resistance, superior switching performance, and high energy pulse withstand capability. This product is particularly suitable for high efficiency switched mode power supplies.
The FQP9N90C and FQPF9N90C are N‑Channel enhancement mode power MOSFETs built with Fairchild’s planar stripe DMOS technology. The devices are optimized for low on‑state resistance, fast switching, and high‑energy avalanche capability, making them suitable for high‑efficiency switched‑mode power supplies.
The datasheet lists absolute maximum ratings, thermal characteristics, and detailed electrical parameters such as drain‑source voltage, continuous and pulsed drain current, gate‑source voltage, and typical on‑resistance. It also includes test circuit diagrams, transient thermal response curves, and mechanical package dimensions for the TO‑220 and TO‑220F variants.
| Drain‑Source Voltage (VDS) | 900 V |
|---|---|
| Gate‑Source Voltage (VGS) | +30 V |
| On‑Resistance (RDS(on)) typical | 1.4 mΩ |
| Thermal Resistance, Junction‑to‑Case (RθJC) | 0.61 °C/W |
| Package Type | TO‑220 / TO‑220F |
The device is rated for a maximum drain‑source voltage of 900 V.
The MOSFET is offered in TO‑220 and TO‑220F packages.
The typical total gate charge is about 45 nC.