This document describes the features and characteristics of the FQP9N90C/FQPF9N90C 900V N-Channel MOSFET produced by Fairchild Semiconductor Corporation. These power field effect transistors utilize Fairchild's proprietary planar stripe DMOS technology to achieve low on-state resistance, superior switching performance, and high energy pulse withstand capabilities in avalanche and commutation modes. These devices are well-suited for high efficiency switched mode power supplies.
This document provides design specifications for the FQP9N90C and FQPF9N90C, which are N-Channel enhancement mode power field effect transistors produced using Fairchild's proprietary planar stripe DMOS technology. These devices feature low on-state resistance and superior switching performance, making them well-suited for high efficiency switched mode power supplies.
| Drain-Source Voltage (Vdss) | 900 V |
|---|---|
| Continuous Drain Current (Tg = 25°C) | 8.0 A |
| Continuous Drain Current (Tg = 100°C) | 2.8 A |
| Pulsed Drain Current | 32 A |
| Gate-Source Voltage | +/- 30 V |
| Single Pulsed Avalanche Energy | 900 mJ |
| Power Dissipation (Tg = 25°C) | 205 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
The device supports a continuous current of 8.0 A at 25°C and 2.8 A at 100°C.
The FQP9N90C can withstand a single pulsed avalanche energy of up to 900 mJ.
The device operates and stores within a temperature range of -55 to +150 °C.