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- Brand
- Fairchild
- Model
- FQPF8N80C
- Industry
- Industrial
- Documents
- 3
- Languages
- EN
- Last added
- 2012-07-12
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Fairchild Semiconductor FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET Datasheet
The document describes the FQP8N80C, FQPF8N80C, and FQPF8N80CYDTU devices, which are N-Channel enhancement mode power field effect transistors produced using Fairchild's proprietary planar stripe DMOS technology. These devices are designed to minimize on-state resistance and provide superior switching performance for high efficiency switch mode power supplies.
Read onlineFairchild FQPF8N80C specifications
| Drain-Source Voltage | 800 V |
|---|---|
| Continuous Drain Current (TC = 25°C) | 8 A |
| On-Resistance (VGS = 10 V) | 1.55 Ω |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | TO-220 |
Source: Fairchild Semiconductor FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET Datasheet
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Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain-source voltage rating for this MOSFET?
The device has a maximum drain-source breakdown voltage of 800 V.
From: Fairchild Semiconductor FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET Datasheet
What is the static on-resistance when the gate-source voltage is 10 V?
The static drain-source on-resistance is 1.55 Ω at a gate-source voltage of 10 V.
From: Fairchild Semiconductor FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET Datasheet
What is the maximum drain‑source voltage rating?
The MOSFET can withstand up to 800 V drain‑source voltage.
From: Fairchild FQP8N80C/FQPF8N80C 800V N-Channel MOSFET Datasheet
What continuous drain current can the device handle at 25 °C?
It is rated for 8 A continuous drain current at 25 °C.
From: Fairchild FQP8N80C/FQPF8N80C 800V N-Channel MOSFET Datasheet
What is the maximum drain‑source voltage for the FQP8N80C/FQPF8N80C?
The maximum drain‑source voltage is 800 V.
From: Fairchild FQP8N80C/FQPF8N80C 800V N-Channel MOSFET Datasheet
