The FQP8N80C/FQPF8N80C MOSFETs are N‑Channel enhancement mode power transistors built with Fairchild’s planar stripe DMOS technology. They are designed for high‑efficiency switch‑mode power supplies, offering low on‑state resistance, fast switching, and robust avalanche performance.
Key features include an 8 A continuous drain current at 25 °C, 800 V drain‑source breakdown voltage, low gate charge (typical 35 nC), low reverse transfer capacitance (typical 13 pF), and a thermal resistance of 0.7 °C/W (junction‑to‑case). The devices are supplied in TO‑220 and TO‑220F packages with detailed mechanical dimensions provided.
| Drain‑Source Voltage (VDS) | 800 V |
|---|---|
| Gate‑Source Voltage (VGS) | ±30 V |
| Typical Gate Charge (Qg) | 35 nC |
| Reverse Transfer Capacitance (Crss) | 13 pF (typical) |
| Power Dissipation (PD) at 25 °C | 178 W |
| Thermal Resistance Junction‑to‑Case (RθJC) | 0.7 °C/W |
The maximum drain‑source voltage is 800 V.