This document describes the features and characteristics of the FQP8N80C/FQPF8N80C, an 800V N-Channel MOSFET, including low on-state resistance, fast switching speed, and high energy pulse capability.
The FQP8N80C/FQPF8N80C MOSFETs are N‑Channel enhancement mode power transistors built with Fairchild’s planar stripe DMOS technology. They are designed for high‑efficiency switch‑mode power supplies and can handle high energy pulses in avalanche and commutation modes.
Key specifications include an 800 V drain‑source breakdown voltage, 8 A continuous drain current at 25 °C, low typical gate charge of 35 nC, and a typical on‑resistance of 1.55 mΩ. The devices are supplied in TO‑220 and TO‑220F packages and feature fast switching characteristics suitable for demanding power applications.
| Drain‑Source Voltage (VDS) | 800 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | 8 A |
| Gate‑Source Voltage (VGS) | ±30 V |
| Typical Gate Charge (Qg) | 35 nC |
| Package | TO‑220 / TO‑220F |
The MOSFET can withstand up to 800 V drain‑source voltage.
It is rated for 8 A continuous drain current at 25 °C.
The typical gate charge is 35 nC.
The device is offered in TO‑220 and TO‑220F packages.